Molecularly Thin Electrolyte for All Solid-State Nonvolatile Two-Dimensional Crystal Memory

• DOI: 10.1021/acs.nanolett.9b03792
• Publication Date: 2019-10-29T18:27:47Z
• Authors: Jierui Liang; Ke Xu; Maokun Wu; Benjamin M. Hunt; Wei-Hua Wang; Kyeongjae Cho; Susan K. Fullerto...
• Keywords: Non-Volatile Memory

A molecularly thin electrolyte is developed to demonstrate a nonvolatile, solid-state, one-transistor (1T) memory based on an electric-double-layer (EDL) gated WSe2 field-effect transistor (FET). The custom-designed monolayer consists of cobalt crown ether phthalocyanine and lithium ions, which are positioned by at either the surface channel or h-BN capping layer achieve "1" "0", respectively. Bistability in significantly improved cap with density functional theory (DFT) calculations showing enhanced trapping Li+ near due ∼1.34 eV increase absolute value adsorption energy compared vacuum. threshold voltage shift between two states corresponds change charge ∼2.5 × 1012 cm–2, On/Off ratio exceeding 104 back gate 0 V. remains stable after 1000 cycles retention time for each state exceeds 6 h (max measured). When write approaches 1 ms, >102, that electrolyte-gated FET can respond scales similar existing flash memory. data suggest faster switching times lower voltages could be feasible top gating.