Stark Tuning of the Silicon Vacancy in Silicon Carbide

• DOI: 10.1021/acs.nanolett.9b04419
• Publication Date: 2019-12-06T20:50:25Z
• Authors: Maximilian Rühl; Lena Bergmann; Michael Krieger; Heiko B. Weber
• Keywords: 02 engineering and technology; 0210 nano-technology

We present a versatile scheme dedicated to exerting strong electric fields up 0.5 MV/cm on color centers in hexagonal silicon carbide, employing transparent epitaxial graphene electrodes. In both the axial and basal direction equally can be selectively controlled. Investigating vacancy (VSi) ensemble photoluminescence experiments, we report Stark splitting of V1′ line 3 meV by electrical field shift V1 1 an field. The spectral fine-tuning VSi, being important candidate for realizing quantum networks, paves way truly indistinguishable single-photon sources.