Integration-Friendly, Chemically Stoichiometric BiFeO3 Films with a Piezoelectric Performance Challenging that of PZT

• DOI: 10.1021/acsami.0c07155
• Publication Date: 2020-07-01T17:50:16Z
• Authors: Miaomiao Niu; Hanfei Zhu; Yingying Wang; Jing Yan; Ning Chen; Peng Yan; Jun Ouyang
• Keywords: 02 engineering and technology; 0210 nano-technology

As a prototype single-phase multiferroic, BiFeO3 exhibits excellent electrical, magnetic, and magnetoelectric properties, appealing to many modern technological applications. One of its overlooked merits is high piezoelectric performance originating from large remnant polarization (Pr) low dielectric constant (εr). Furthermore, Curie temperature coercive field ensure good stabilities in device However, achieve close-to-intrinsic processing usually used for the preparation highly crystalline (epitaxial or oriented) films. Proliferation defects due loss volatile Bi2O3 high-temperature process incompatibility with CMOS–Si technologies have hindered development film-based micro-electro-mechanical systems (piezo-MEMS) devices. In this work, we successfully sputter-deposited (100) oriented thick films (∼1 μm) on Si at 350 °C through use conductive perovskite buffer layer LaNiO3. Formation bulk interfacial suppressed by combination deposition an oxygen-rich atmosphere, resulting chemically stoichiometric These displayed Pr (∼60 μC·cm–2), εr (∼200), small (<0.02), as well self-bias voltages their as-grown aged states. Together transverse coefficient (e31,f ∼ −2.8 C·m–2), electromechanical performances outstanding fatigue aging resistances are demonstrated patterned BiFeO3–Si cantilever integration-friendly ideal replacements PZT piezo-MEMS