High-Performance Organic Synaptic Transistors with an Ultrathin Active Layer for Neuromorphic Computing

• DOI: 10.1021/acsami.0c22271
• Publication Date: 2021-02-10T17:48:04Z
• Authors: Qian Yang; Huihuang Yang; Dongxu Lv; Rengjian Yu; Enlong Li; Lihua He; Qizhen Chen; Huipeng Chen; Tailiang Guo
• Keywords: Neuromorphic engineering; Synaptic weight

In recent years, much attention has been focused on two-dimensional (2D) material-based synaptic transistor devices because of their inherent advantages low dimension, simultaneous read–write operation and high efficiency. However, process compatibility repeatability these materials are still a big challenge, as well other issues such complex transfer material selectivity. this work, transistors with an ultrathin organic semiconductor layer (down to 7 nm) were obtained by the simple dip-coating process, which exhibited current switch ratio up 106, off state nearly 10–12 A, voltage −3 V. Moreover, various behaviors successfully simulated including excitatory postsynaptic current, paired pulse facilitation, long-term potentiation, depression. More importantly, under conditions, excellent memory preservation, linearity weight update enhanced effect defects improved controllability gate active layer, led pattern recognition rate 85%. This is first work demonstrate that rate, crucial parameter for neuromorphic computing can be significantly reducing thickness channel layer. Hence, results not only reveal effective way improve plasticity retention artificial synapse via modulation but also expand selection 2D devices.