Enhanced Photoluminescence of Flexible InGaN/GaN Multiple Quantum Wells on Fabric by Piezo-Phototronic Effect

• DOI: 10.1021/acsami.1c12835
• Publication Date: 2022-01-06T21:51:10Z
• Authors: Wei Sha; Qilin Hua; Jiangwen Wang; Zifeng Cong; Xiao Cui; Keyu Ji; Xinhuan Dai; Bingjun Wang; Wenbin Guo; Weiguo Hu
• Keywords: Transfer printing; Flexible Electronics

Fabric-based wearable electronics are showing advantages in emerging applications devices, Internet of everything, and artificial intelligence. Compared to the one with organic materials, devices based on inorganic semiconductors (e.g., GaN) commonly show superior characteristics high stability. Upon transfer GaN-based heterogeneous films from their rigid substrates onto flexible/fabric substrates, changes strain would influence device performance. Here, we demonstrate InGaN/GaN multiple quantum well (MQW) an effective lift-off technique. The physical properties MQWs film characterized by atomic force microscopy high-resolution X-ray diffraction, indicating that transferred does not suffer huge damage. Excellent flexible observed fabric, photoluminescence (PL) intensity is enhanced piezo-phototronic effect, which shows increase about 10% applying external increasing curvature 6.25 mm-1. Moreover, energy band diagrams GaN/InGaN/GaN heterojunction at different strains illustrated clarify internal modulation mechanism effect. This work facilitate guidance constructing high-performance fabrics also push forward rapid development electronics.