Single-Step Synthesis of Nitrogen-Doped Graphene Oxide from Aniline at Ambient Conditions

• DOI: 10.1021/acsami.1c21150
• Publication Date: 2022-01-19T13:13:30Z
• Authors: Muhammad Adeel Zafar; Oomman K. Varghese; Francisco C. Robl...; Yang Liu; Mohan V. Jacob
• Keywords: 02 engineering and technology; 0210 nano-technology

Single-step, single-precursor synthesis of nitrogen-doped graphene oxide (N-GO) was demonstrated in this work. By choosing aniline as the sole source of carbon and nitrogen, N-GO films were fabricated using microwave plasma at a power as low as 80 W in atmospheric conditions. The aniline vapor dissociated under plasma formed islands of N-GO nanosheets on the substrates or walls of the quartz deposition chamber. The interplanar spacing in the pristine N-GO films was observed to be lower than that of GO films, which indicated a lower concentration of oxygen and other species present in the space between the N-GO layers. The as-fabricated N-GO demonstrated superior antiscaling and algicidal properties that are deemed imperative for water purification applications.