Self-Driven Broadband Photodetectors Based on MoSe2/FePS3 van der Waals n–p Type-II Heterostructures
Quantum Efficiency
DOI:
10.1021/acsami.1c24308
Publication Date:
2022-02-22T16:14:53Z
AUTHORS (14)
ABSTRACT
Two-dimensional (2D) van der Waals materials with broadband optical absorption are promising candidates for next-generation UV-vis-NIR photodetectors. FePS3, one of the emerging antiferromagnetic a wide bandgap and p-type conductivity, has been reported as an excellent candidate UV optoelectronics. However, high sensitivity photodetector self-driven mode based on FePS3 not yet realized. Here, we report high-performance self-powered multilayer MoSe2/FePS3 type-II n-p heterojunction working range from 350 to 900 nm. The presented operates at zero bias room temperature under ambient conditions. It exhibits maximum responsivity (Rmax) 52 mA W-1 external quantum efficiency (EQEmax) 12% 522 nm, which better than characteristics its individual constituents many other photodetectors made 2D heterostructures. performance is attributed built-in electric field in junction. Our approach provides platform applications.
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