Growth of Graphitic Carbon Nitride-Incorporated ZnO Nanorods on Silicon Pyramidal Substrates for Enhanced Hydrogen Sensing Applications

Nanorod Graphitic carbon nitride Carbon fibers
DOI: 10.1021/acsami.2c06291 Publication Date: 2022-09-01T17:47:10Z
ABSTRACT
Monitoring the hydrogen gas (H2) level is highly important in a wide range of applications. Oxide-carbon hybrids have emerged as promising material for fabrication sensors this purpose. Here, first time, graphitic carbon nitride (g-C3N4)-doped zinc oxide nanorods (ZNRs) been grown on silicon (Si) pyramid-shaped surfaces by facile hydrothermal reaction method. The systematic analyses revealed that g-C3N4 nanostructures (NS) consistently incorporated into ZNRs pyramidal (Py-Si) surface (g-C3N4-ZNRs/Py-Si). combined properties present structure exhibit an excellent sensitivity (∼53%) under H2 exposure, better than bare (12%). results fine incorporation Py-Si improves sensing when compared to planar (Pl-Si) surface. doping increases electrical conductivity through its graphene-like edges (due formation delocalized bonds during self-doping), FESEM images. In addition, presence defects induces adsorption ZnO active sites. Moreover, integration 1D (g-C3N4-ZNRs) 3D opens up new opportunities low-cost at room temperature. It easy way enhance temperature, which desirable practical sensor
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