Correlative Nanoscale Imaging of Strained hBN Spin Defects

• DOI: 10.1021/acsami.2c11886
• Publication Date: 2022-09-01T17:56:20Z
• Authors: David Curie; Jaron T. Krogel; Lukas Cavar; Abhishek Solanki; Pramey Upadhyaya; Tongcang Li; Yun-Yi Pai; Michael Chilcote; Vasudevan Iyer; Alexander Puretzky; Ilia Ivanov; Mao-Hua Du; Fernando Reboredo; Benjamin Lawrie
• Keywords: Quantum Physics; Condensed Matter - Mesoscale and Nanoscale Physics; Mesoscale and Nanoscale Physics (cond-mat.mes-hall); FOS: Physical sciences; 02 engineering and technology; Quantum Physics (quant-ph); 0210 nano-technology

Spin defects like the negatively charged boron vacancy color center ($V_B^-$) in hexagonal boron nitride (hBN) may enable new forms of quantum sensing with near-surface defects in layered van der Waals heterostructures. Here, we reveal the effect of strain associated with creases in hBN flakes on $V_B^-$ and $V_B$ color centers in hBN with correlative cathodoluminescence and photoluminescence microscopies. We observe strong localized enhancement and redshifting of the $V_B^-$ luminescence at creases, consistent with density functional theory calculations showing $V_B^-$ migration toward regions with moderate uniaxial compressive strain. The ability to manipulate these spin defects with highly localized strain offers intriguing possibilities for future 2D quantum sensors.