High Mobility Two-Dimensional Electron Gas at the BaSnO3/SrNbO3 Interface

• DOI: 10.1021/acsami.2c12195
• Publication Date: 2022-09-23T17:27:31Z
• Authors: Sharad Mahatara; Suresh Thapa; Hanjong Paik; Ryan Comes; Boris Kiefer
• Keywords: Interface (matter)

Oxide two-dimensional electron gases (2DEGs) promise high charge carrier concentrations and low-loss electronic transport in semiconductors such as BaSnO3 (BSO). ACBN0 computations for BSO/SrNbO3 (SNO) interfaces show Nb-4d injection into extended Sn-5s states. The conduction band minimum consists of states ∼1.2 eV below the Fermi level intermediate thickness 6-unit cell BSO/6-unit SNO superlattices, corresponding to an density BSO ∼1021 cm–3. Experimental studies analogous BSO/SNO grown by molecular beam epitaxy confirm significant transfer from BSO. In situ angle-resolved X-ray photoelectron spectroscopy ∼4 × 1021 consistency theory experiments that provide a novel materials platform low loss 2DEGs.