Radiation Resilient Two-Dimensional Electronics

• DOI: 10.1021/acsami.3c02406
• Publication Date: 2023-05-26T14:16:55Z
• Authors: Thomas F. Schrang...; Andrew Pannone; Harikrishnan Ravi...; Sergei P. Stepanoff; Nicholas Trainor; Joan M. Redwing; Douglas E. Wolfe; Saptarshi Das
• Keywords: Molybdenum disulfide; Radiation hardening

Limitations in cloud-based computing have prompted a paradigm shift toward all-in-one "edge" devices capable of independent data sensing, computing, and storage. Advanced defense space applications stand to benefit immensely from this due their need for continual operation areas where maintaining remote oversight is difficult. However, the extreme environments relevant these necessitate rigorous testing technologies, with common requirement being hardness ionizing radiation. Two-dimensional (2D) molybdenum disulfide (MoS2) has been noted enable storage, logic capabilities necessary edge devices. Despite this, investigation radiation effects MoS2-based remains incomplete. In particular, studies on gamma MoS2 largely limited standalone films, few device investigations; best our knowledge, no explorations made into sensing memory work, we used statistical approach study high-dose (1 Mrad) photosensitive programmable memtransistors fabricated large-area monolayer MoS2. Memtransistors were divided separate groups ensure accurate extraction characteristics pertaining baseline performance, before after irradiation. All-MoS2 gates also assessed determine irradiation impact implementation. Our findings show that multiple functionalities are not severely impacted by even without dedicated shielding/mitigation techniques. We believe results serve as foundation more application-oriented going forward.