Partial Ligand Stripping from CsPbBr3 Nanocrystals Improves Their Performance in Light-Emitting Diodes

• DOI: 10.1021/acsami.3c15201
• Publication Date: 2024-02-21T16:58:05Z
• Authors: Jinfei Dai; Hossein Roshan; Manuela De Franco; Luca Goldoni; Francesco De Boni; Jun Xi; Fang Yuan; Hua Dong; Zhaoxin Wu; Francesco Di Stasio; Liberato Manna
• Keywords: Quantum yield; Quantum Efficiency; Stripping (fiber)

Halide perovskite nanocrystals (NCs), specifically CsPbBr3, have attracted considerable interest due to their remarkable optical properties for optoelectronic devices. To achieve high-efficiency light-emitting diodes (LEDs) based on CsPbBr3 it is crucial optimize both photoluminescence quantum yield (PLQY) and carrier transport when they are deposited form films substrates. While the exchange of native ligands with didodecyl dimethylammonium bromide (DDAB) ligand pairs has been successful in boosting PLQY, dense DDAB coverage surface NCs should impede limit device efficiency. Following our previous work, here, we use oleyl phosphonic acid (OLPA) as a selective stripping agent remove fraction from NC demonstrate that such enhances while maintaining high PLQY. Through systematic optimization OLPA dosage, significantly improve performance LEDs, achieving maximum external efficiency (EQE) 15.1% at 516 nm brightness 5931 cd m–2. These findings underscore potential controlled enhance NC-based