Single-Gate MoS2 Tunnel FET with a Thickness-Modulated Homojunction

• DOI: 10.1021/acsami.3c15535
• Publication Date: 2024-02-07T16:03:50Z
• Authors: Tomohiro Fukui; Tomonori Nishimura; Yasumitsu Miyata; Keiji Ueno; Takashi Taniguchi; Kenji Watanabe; Kosuke Nagashio
• Keywords: Homojunction; Tunnel field-effect transistor; Tungsten diselenide; Dangling bond; Interface (matter)

Two-dimensional (2D) materials stand as a promising platform for tunnel field-effect transistors (TFETs) in the pursuit of low-power electronics Internet Things era. This promise arises from their dangling bond-free van der Waals heterointerface. Nevertheless, attainment high device performance is markedly impeded by requirement precise control over 2D assembly with multiple stacks different layers. In this study, we addressed thickness-modulated n/p+-homojunction prepared Nb-doped p+-MoS2 crystal, where issue on interface traps can be neglected without any external due to homojunction. Notably, our observations reveal existence negative differential resistance, even at room temperature (RT). signifies successful realization TFET operation under type III band alignment conditions single gate RT, suggesting that dominant current mechanism band-to-band tunneling ideal interface.