Interfacial Modulation of Spin–Orbit Torques Induced by Two-Dimensional van der Waals Material ZrSe3

• DOI: 10.1021/acsami.4c00881
• Publication Date: 2024-04-05T09:44:36Z
• Authors: Lulu Cao; Qian Chen; Yonghui Zhu; Kaiyu Tong; Wenjia Li; Jun Ma; Milad Jalali; Zhaocong Huang; Jing Wu; Ya Zhai
• Keywords: Modulation (music); Spin–orbit interaction

Two-dimensional van der Waals (2D vdW) materials are widely used in spin-orbit torque (SOT) devices. Recent studies have demonstrated the low crystal symmetry and large spin Hall conductivity of 2D vdW ZrSe3, indicating its potential applications low-power SOT Here, we study interfacial contribution SOTs current-induced magnetization switching ZrSe3/Py (Ni80Fe20) ZrSe3/Cu/Py heterostructures. efficiencies samples detected by spin-torque ferromagnetic resonance (ST-FMR), out-of-plane damping-like (τB) is observed. The ratio between τB field-like (τA) decreases from 0.175 to 0.138 when inserting 1 nm Cu at interface then drops 0.001 thickness intercalation 2 nm, that inhibits component SOT. Moreover, efficiency increased 3.05 5.21, which may be attributed being beneficial improve Py ZrSe3. Theoretical calculation has shown spacer can change ZrSe3 semiconductor conductor, thereby decreasing Schottky barrier increasing transmission current. Furthermore, magneto-optical Kerr effect (MOKE) microscopy employed verify current-driven these structures. In comparison bilayer, critical current density reduced Cu, demonstrating higher lower power consumption