Sub-5 nm Ultrathin In2O3 Transistors for High-Performance and Low-Power Electronic Applications

• DOI: 10.1021/acsami.4c01353
• Publication Date: 2024-04-27T13:03:08Z
• Authors: Linqiang Xu; Lianqiang Xu; Jun Lan; Yida Li; Qiuhui Li; Aili Wang; Ying Guo; Yee Sin Ang; Ruge Quhe; Jing Lu
• Keywords: Transconductance

Ultrathin oxide semiconductors are promising candidates for back-end-of-line (BEOL) compatible transistors and monolithic three-dimensional integration. Experimentally, ultrathin indium (In2O3) field-effect (FETs) with thicknesses down to 0.4 nm exhibit an extremely high drain current (104 μA/μm) transconductance (4000 μS/μm). Here, we employ ab initio quantum transport simulation investigate the performance limit of sub-5 gate length (Lg) In2O3 FETs. Based on International Technology Roadmap Semiconductors (ITRS) criteria high-performance (HP) devices, scaling FETs can reach 2 in terms on-state current, delay time, power dissipation. The wide bandgap nature (3.0 eV) renders it a suitable candidate ITRS low-power (LP) electronics Lg 3 nm. Notably, both HP LP superior energy-delay products as compared those other common 2D such monolayer MoS2 MoTe2. These findings unveil potential nanoelectronic device applications.