Lanthanum(III)hydroxide Nanoparticles and Polyethyleneimine-Functionalized Graphene Quantum Dot Nanocomposites in Photosensitive Silicon Heterojunctions
Lanthanum
DOI:
10.1021/acsami.4c02102
Publication Date:
2024-04-18T12:15:25Z
AUTHORS (10)
ABSTRACT
Lanthanides are largely used in optoelectronics as dopants to enhance the physical and optical properties of semiconducting devices. In this study, lanthanum(III)hydroxide nanoparticles (La(OH)3NPs) a dopant polyethylenimine (PEI)-functionalized nitrogen (N)-doped graphene quantum dots (PEI-NGQDs). The La(OH)3NPs-dopedPEI-NGQDs nanocomposites prepared from La(NO)3 single step by green novel method characterized Fourier-transform infrared spectroscopy (FT-IR), ultraviolet-visible (UV-vis), X-ray photoelectron (XPS), transmission electron microscopy (TEM). Deposited over an n-type Si wafer, form Schottky diodes. I-V characteristics photoresponse diodes investigated function illumination intensity range 0-110 mW cm-2 at room temperature. It is found that rectification ratio ideality factor diode decrease, while barrier series resistance increase with enhancing illuminations. As photodetector, La(OH)3NPs-dopedPEI-NGQDs/n-Si heterojunction exhibits appreciable responsivity 3.9 × 10-3 AW-1 under 22 -0.3 V bias maximum detectivity 8.7 108 Jones -0.5 V. This study introduces synthesis presents structural, electrical, optoelectronic La(OH)3NPs-dopedPEI-NGQDs, demonstrating these can be promising for applications.
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