Simulations of Anisotropic Monolayer GaSCl for p-Type Sub-10 nm High-Performance and Low-Power FETs

• DOI: 10.1021/acsami.4c06320
• Publication Date: 2024-07-16T18:48:43Z
• Authors: Hao Shi; Siyu Yang; Huipu Wang; Dupeng Ding; Yang Hu; Hengze Qu; Chuyao Chen; Xuemin Hu; Shengli Zhang

Two-dimensional materials have been extensively studied in field-effect transistors (FETs). However, the performance of p-type FETs has lagged behind that n-type, which limits development complementary logical circuits. Here, we investigate electronic properties and transport anisotropic monolayer GaSCl for through first-principles calculations. The result excellent device performance. with 10 nm channel length an on-state current 2351 μA/μm high-performance (HP) devices along y direction 992 on/off ratio exceeding 107 low-power (LP) applications x direction. In addition, delay-time (τ) power dissipation product can fully meet International Technology Roadmap Semiconductors standards HP LP applications. Our work illustrates is a competitive next-generation devices.