High-Performance Gate-Voltage-Tunable Photodiodes Based on Nb2Pd3Se8/WSe2 Mixed-Dimensional Heterojunctions

• DOI: 10.1021/acsami.4c09682
• Publication Date: 2024-11-06T01:29:56Z
• Authors: Qinggang Qin; Zhengyu Xu; Wei Chen; Xue Liu; Jiawang Chen; Wenshuai Gao; Liang Li
• Keywords: Photodiode

The mixed-dimensional (MD) van der Waals (vdWs) heterojunction for photodetectors has garnered significant attention owing to its exceptional compatibility and superior quality. Low-dimensional material heterojunctions exhibit unique photoelectric properties attributed their nanoscale thickness vdWs contact surfaces. In this work, a novel MD composed of one-dimensional (1D) Nb2Pd3Se8 nanowires two-dimensional (2D) WSe2 nanosheets is proposed. heterojunction's energy band engineering accomplished by manipulating the Fermi level bipolar 2D via gate voltage, resulting in rectification characteristic that can be adjusted with voltage. Under 685 nm laser irradiation, it demonstrates self-powered photodetection performance, attaining photoresponsivity 1.45 A W–1, an ultrahigh detectivity 6.8 × 1012 Jones, ultrafast response time 37/64 μs at zero bias. addition, broadband photodetector from 255 1064 realized. These results demonstrate great potential Nb2Pd3Se8/WSe2 heterostructures advanced electronic optoelectronic devices.