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Performance Improvement of (AlxGa1–x)2O3/Ga2O3 Heterostructure FET via Supercritical Isostatic Pressing-Induced Self-Redox

DOI: 10.1021/acsami.4c21796 Publication Date: 2025-03-20T22:53:00Z
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AUTHORS (6)
Huangbai Liu
Hao Yu
Lei Li
Zehui Peng
Ray-Hua Horng
Kuan-Chang Chang
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