Transient Thermometry and High-Resolution Transmission Electron Microscopy Analysis of Filamentary Resistive Switches

• DOI: 10.1021/acsami.6b05034
• Publication Date: 2016-06-28T21:33:52Z
• Authors: Jonghan Kwon; Abhishek A. Sharma; Chao-Yang Chen; Andrea Fantini; Malgorzata Jurczak; Andrew A. Herzing; James A. Bain; Yoosuf N. Picard; Marek Skowronski
• Keywords: Transient (computer programming); Resistive touchscreen

We present data on the filament size and temperature distribution in Hf0.82Al0.18Ox-based Resistive Random Access Memory (RRAM) devices obtained by transient thermometry high-resolution transmission electron microscopy (HRTEM). The shows that of nonvolatile conducting can reach temperatures as high 1600 K at onset RESET voltage 0.8 V power 40 μW. was estimated about 1 nm diameter. Hot increases surrounding resistivity oxide, causing it to conduct carry a significant fraction total current. current spreading results slowing down increase higher power. have been corroborated HRTEM analysis as-fabricated switched RRAM devices. functional HfAlOx layer is amorphous. In were switched, we detected small crystalline region 10–15 size. crystallization determined be 850 an independent annealing experiment. agrees with thermal modeling based data. Scanning (TEM) coordinated energy loss spectroscopy could not detect changes chemical makeup filament.