Amorphous TiO2 Compact Layers via ALD for Planar Halide Perovskite Photovoltaics
02 engineering and technology
0210 nano-technology
7. Clean energy
DOI:
10.1021/acsami.6b07658
Publication Date:
2016-09-06T21:44:36Z
AUTHORS (7)
ABSTRACT
A low-temperature (<120 °C) route to pinhole-free amorphous TiO2 compact layers may pave the way more efficient, flexible, and stable inverted perovskite halide device designs. Toward this end, we utilize thermal atomic layer deposition (ALD) synthesize ultrathin (12 nm) underlayers for planar PV. Although performance with as-deposited films is poor, identify room-temperature UV–O3 treatment as a efficiency comparable crystalline thin synthesized by higher temperature methods. We further explore chemical, physical, interfacial properties that might explain improved through X-ray diffraction, spectroscopic ellipsometry, Raman spectroscopy, photoelectron spectroscopy. These findings challenge our intuition about effective electron selective well point greater selection of flexible substrates
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