Ferroelectric Resistive Switching in High-Density Nanocapacitor Arrays Based on BiFeO3 Ultrathin Films and Ordered Pt Nanoelectrodes

• DOI: 10.1021/acsami.6b07792
• Publication Date: 2016-08-15T11:45:49Z
• Authors: Zengxing Lu; Zhen Fan; Peilian Li; Hua Fan; Guo Tian; Xiao Song; Zhongwen Li; Lina Zhao; Kangrong Huang; Fengyuan Zhang; Zhang Zhang; Min Zeng; Xingsen Gao; Jiajun Feng; Jianguo Wan; Junming Liu
• Keywords: Resistive touchscreen

Ferroelectric resistive switching (RS), manifested as a switchable ferroelectric diode effect, was observed in well-ordered and high-density nanocapacitor arrays based on continuous BiFeO3 (BFO) ultrathin films isolated Pt nanonelectrodes. The thickness of BFO the lateral dimension electrodes were aggressively scaled down to <10 nm ∼60 nm, respectively, representing an ultrahigh memory density ∼100 Gbit/inch2. Moreover, RS behavior those nanocapacitors showed large ON/OFF ratio (above 103) long retention time over 6,000 s. Our results not only demonstrate for first that effect could be realized thickness, but also suggest great potentials applications data storage.