Temperature-Dependent Detectivity of Near-Infrared Organic Bulk Heterojunction Photodiodes

Photodiode
DOI: 10.1021/acsami.6b12162 Publication Date: 2016-12-17T16:15:14Z
ABSTRACT
Bulk heterojunction photodiodes are fabricated using a new donor-acceptor polymer with near-infrared absorption edge at 1.2 μm, achieving detectivity up to 1012 Jones wavelength of 1 μm and an excellent linear dynamic range 86 dB. The photodiode is maximized by operating zero bias suppress dark current, while thin 175 nm active layer used facilitate charge collection without reverse bias. Analysis the temperature dependence current spectral response demonstrates 2.8-fold increase in as was lowered from 44 -12 °C, relatively small change when compared that inorganic-based devices. shows switching speed reaching 120 μs external An application our NIR detect arterial pulses fingertip demonstrated.
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