Interface Energy Alignment of Atomic-Layer-Deposited VOx on Pentacene: an in Situ Photoelectron Spectroscopy Investigation

• DOI: 10.1021/acsami.6b12832
• Publication Date: 2016-12-26T12:41:03Z
• Authors: Ran Zhao; Yuanhong Gao; Zheng Guo; Yantao Su; Xinwei Wang
• Keywords: Pentacene; Ultraviolet photoelectron spectroscopy; Vanadium Oxide; Contact resistance

Ultrathin atomic-layer-deposited (ALD) vanadium oxide (VOx) interlayer has recently been demonstrated for remarkably reducing the contact resistance in organic electronic devices (Adv. Funct. Mater. 2016, 26, 4456). Herein, we present an situ photoelectron spectroscopy investigation (including X-ray and ultraviolet spectroscopies) of ALD VOx grown on pentacene to understand role improved resistance. The characterizations allow us monitor growth process trace evolutions work function, HOMO level, defect states during growth. initial is found be partially delayed first ∼20 cycles. underneath layer largely intact after ALD. contain a high density starting from 0.67 eV below Fermi energy level these excellent alignment with pentacene, which therefore allows provide efficient hole-injection pathway at interface.