Ultralow-Temperature Solution-Processed Aluminum Oxide Dielectrics via Local Structure Control of Nanoclusters

• DOI: 10.1021/acsami.7b09523
• Publication Date: 2017-09-18T11:23:11Z
• Authors: Jeong-Wan Jo; Yong-Hoon Kim; Joohyung Park; Jae Sang Heo; Seongpil Hwang; Won-June Lee; Myung-Han Yoon; Myung-Gil Kim; Sung Kyu Park
• Keywords: Nanoclusters; Aluminum Oxide

Oxide dielectric materials play a key role in wide range of high-performance solid-state electronics from semiconductor devices to emerging wearable and soft bioelectronic devices. Although several previous advances are noteworthy, their typical processing temperature still far exceeds the thermal limitations materials, impeding utilization these fields. Here, we report an innovative route form highly reliable aluminum oxide films using ultralow-temperature (<60 °C) solution process with class nanocluster precursors. The extremely low-temperature synthesis was achieved by low-impurity, bulky metal-oxo-hydroxy nanoclusters combined spatially controllable energetic light activation process. It noteworthy that room-temperature effective dissociating clusters, enabling formation dense atomic network at low temperature. solution-processed dielectrics demonstrated high breakdown field (>6 MV cm-1), leakage (∼1 × 10-8 A cm-2 2 excellent electrical stability comparable those vacuum-deposited high-temperature-processed films. For potential applications dielectrics, transparent metal oxides carbon nanotube active as well integrated circuits were implemented directly on both ultrathin polymeric stretchable substrates.