Wet-Chemical Preparation of Silicon Tunnel Oxides for Transparent Passivated Contacts in Crystalline Silicon Solar Cells

• DOI: 10.1021/acsami.8b02002
• Publication Date: 2018-04-17T17:34:03Z
• Authors: Malte Köhler; Manuel Pomaska; Florian Lentz; Friedhelm Finger; Uwe Rau; Kaining Ding
• Keywords: Passivation; Nanocrystalline silicon; Electrical contacts

Transparent passivated contacts (TPCs) using a wide band gap microcrystalline silicon carbide (μc-SiC:H(n)), tunnel oxide (SiO2) stack are an alternative to amorphous silicon-based for the front side of heterojunction solar cells. In systematic study μc-SiC:H(n)/SiO2/c-Si contact, we investigated selected wet-chemical oxidation methods formation ultrathin SiO2, in order passivate surface while ensuring low contact resistivity. By tuning SiO2 properties, implied open-circuit voltages 714 mV and resistivities 32 mΩ cm2 were achieved as transparent contacts.