High-k Fluoropolymer Gate Dielectric in Electrically Stable Organic Field-Effect Transistors

• DOI: 10.1021/acsami.8b20827
• Publication Date: 2019-04-09T22:22:22Z
• Authors: Alexander T. Lill; Ala’a F. Eftaiha; Jianfei Huang; Hao Yang; Martin Seifrid; Ming Wang; Guillermo C. Bazan; Thuc-Quyen Nguyen
• Keywords: 02 engineering and technology; 0210 nano-technology

A detailed study of a high-k fluoropolymer gate dielectric material, poly(vinylidene fluoride- co-hexafluoropropylene) [P(VDF-HFP)], is presented as a guide to achieve low operational voltage and electrically stable device performance. The large dipole moment of C-F dipoles in P(VDF-HFP) is responsible for its high dielectric constant as well as its potentially ferroelectric behavior that must be minimized to avoid hysteretic current-voltage characteristics. A range of material grades and processing conditions are explored and are shown to have a significant effect on the degree of hysteresis observed in device-transfer characteristics. The percentage of HFP monomer in the P(VDF-HFP) dielectric has an effect on gate-dependent mobility induced by disorder at the semiconductor-dielectric interface. Most importantly, we present the considerations that must be made to achieve optimal performance in multiple device architectures of organic field-effect transistors when using P(VDF-HFP) as a dielectric layer.