Protection of GaInP2 Photocathodes by Direct Photoelectrodeposition of MoSx Thin Films

Photocathode Photocurrent
DOI: 10.1021/acsami.9b03742 Publication Date: 2019-06-18T16:28:13Z
ABSTRACT
Catalytic MoSx thin films have been directly photoelectrodeposited on GaInP2 photocathodes for stable photoelectrochemical hydrogen generation. Specifically, the deposition conditions were controlled to obtain 8–10 nm p-GaInP2 substrates without ancillary protective layers. The nominally composed of MoS2, with additional MoOxSy and MoO3 species detected showed no long-range crystalline order. as-deposited material excellent catalytic activity toward evolution reaction relative bare p-GaInP2. Notably, appreciable photocurrent reduction was incurred by addition catalyst photocathode under light-limited operating conditions, highlighting advantageous optical properties film. also imparted enhanced durability in acidic maintaining nearly 85% initial after 50 h electrolysis. In total, this work demonstrates a simple method producing dual-function catalyst/protective layers high-performance, planar III–V photoelectrodes energy conversion.
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