The Electrical and Photodetector Characteristics of the Graphene:PVA/p-Si Schottky Structures Depending on Illumination Intensities

• DOI: 10.1021/acsomega.4c05219
• Publication Date: 2024-07-11T15:31:51Z
• Authors: Murat Ulusoy; Serhat Koçyiğit; Adem Tataroğlu; S. Altındal Yerişkin
• Keywords: Chemistry; 02 engineering and technology; 0210 nano-technology; QD1-999

Five samples were fabricated to obtain a diode with PVA interface, both and without graphene doping at different rates high rectification in the dark. The electrospinning method was employed apply doped undoped solutions, creating interlayers. Since 1 wt % graphene-doped interlayer outperformed other samples, main electrical photodetector characteristics of this structure investigated. parameters probed by TE, Norde, Cheung methods, (