High-Bandwidth Extended-SWIR GeSn Photodetectors on Silicon Achieving Ultrafast Broadband Spectroscopic Response

• DOI: 10.1021/acsphotonics.2c00260
• Publication Date: 2022-03-16T19:29:57Z
• Authors: Mahmoud R. M. Atalla; Simone Assali; Sebastian Koelling; Anis Attiaoui; Oussama Moutanabbir
• Keywords: Photodiode; Picosecond; Supercontinuum

The availability of high-frequency pulsed emitters in the 2–2.5 μm wavelength range paved way for a wealth new applications ultrafast spectroscopy, free-space and fiber-optical communications, surveillance recognition, artificial intelligence, medical imaging. However, developing these emerging technologies their large-scale use depend on high-speed, low-noise, cost-effective photodetectors. With this perspective, here we demonstrate GeSn photodiodes grown silicon wafers featuring high broadband operation covering extended-SWIR with peak responsivity 0.3 A/W at room temperature. These devices exhibit bandwidth reaching 7.5 GHz 5 V bias 2.6 cutoff wavelength, integration time-resolved spectroscopy is demonstrated. In addition to enabling electroluminescence 2.3 μm, high-speed detectors was also exploited diagnostics ultrashort pulses supercontinuum laser temporal resolution picosecond 2.5 μm. Establishing capabilities highlights potential manufacturable silicon-integrated applications.