High-Performance InSe Photodetector Induced by Synergetic Surface Plasmon Resonance and Surface Engineering

• DOI: 10.1021/acsphotonics.4c00332
• Publication Date: 2024-06-20T04:51:57Z
• Authors: Li Li; Qianqian Wu; Chenglin Wang; Zhengyang Cai; Liangliang Lin; Xiaofeng Gu; Kostya Ken Ostrikov; Haiyan Nan; Shaoqing Xiao
• Keywords: Localized surface plasmon

Indium selenide (InSe) has gained extensive research attention due to its unique structure and broad tunable optical response in the visible near-infrared range. However, InSe a low absorption rate intrinsic indirect bandgap nature is easily affected by ambient air water vapor, thus limiting photoelectric performance. In this work, we significantly enhanced performance of photodetector taking advantage synergetic effect both surface plasmon resonance (SPR) engineering. The former induced an array gold nanoparticles (Au NPs) placed under channel, while latter realized 20 nm layer deposited on surface. responsivity such In/InSe/Au NP-based reaches 15.2 A/W at 637 nm, 3 orders magnitude higher than that In/InSe 4 original photodetector. speed achieves 1.75 ms, representing three-order-of-magnitude improvement over This enhancement can be attributed increased charge transfer localized SPR, which couples with out-of-plane polarized excitons, enhancing light–matter interaction InSe. Raman spectroscopy photoluminescence (PL) analyses confirmed significant In–InSe interface PL presence Au NPs. Therefore, our work provides effective pathway for improving properties InSe, important step toward practical application optoelectronic devices.