Onset of the Efficiency Droop in GaInN Quantum Well Light-Emitting Diodes under Photoluminescence and Electroluminescence Excitation

• DOI: 10.1021/acsphotonics.5b00305
• Publication Date: 2015-07-29T16:11:08Z
• Authors: Guan-Bo Lin; E. Fred Schubert; Jaehee Cho; Jun Hyuk Park; Jong Kyu Kim
• Keywords: Quantum Efficiency; Auger effect

The efficiency of Ga0.87In0.13N/GaN single and multiple quantum well (QW) light-emitting diodes is investigated under photoluminescence (PL) electroluminescence (EL) excitation. By measuring the laser spot area (knife-edge method) absorbance GaInN QW (transmittance/reflectance measurements), PL excitation density can be converted to an equivalent EL density. droop-onset occurs at 2.08 × 1026 cm–3 s–1 (J = 10 A/cm2), whereas no droop found for densities as high 3.11 1027 149 A/cm2). Considering Shockley–Read–Hall, radiative, Auger recombination including carrier leakage shows that consistent with a reduction injection efficiency.