Fabrication and Deterministic Transfer of High-Quality Quantum Emitters in Hexagonal Boron Nitride

• DOI: 10.1021/acsphotonics.8b00127
• Publication Date: 2018-04-06T18:55:13Z
• Authors: Tobias Vogl; Geoff Campbell; Ben C. Buchler; Yuerui Lu; Ping Koy Lam
• Keywords: Hexagonal boron nitride; Wide-bandgap semiconductor

Color centers in solid state crystals have become a frequently used system for single-photon generation, advancing the development of integrated photonic devices quantum optics and communication applications. In particular, defects hosted by two-dimensional (2D) hexagonal boron nitride (hBN) are promising candidate next-generation sources, due to its chemical thermal robustness high brightness at room temperature. The 2D crystal lattice hBN allows extraction efficiency easy integration into circuits. Here we develop plasma etching techniques with subsequent high-temperature annealing reliably create defects. We show how different fabrication parameters influence defect formation probability emitter brightness. A full optical characterization reveals higher quality created emitters, represented narrow spectrum, short excited lifetime, purity. also investigated photostability on very long time scales. utilize wet chemically assisted transfer process sources onto arbitrary substrates, demonstrating feasibility scalable information processing networks.