Spectroscopic Nanoimaging of All-Semiconductor Plasmonic Gratings Using Photoinduced Force and Scattering Type Nanoscopy

• DOI: 10.1021/acsphotonics.8b00700
• Publication Date: 2018-10-22T05:04:47Z
• Authors: Yi Huang; David Legrand; Rémi Vincent; Ekoué Athos Dogbe...; Derek Nowak; Gilles Lerondel; Renaud Bachelot; Thierry Taliercio; Franziska Barho; Laurent Cerutti; Fernando Gonzalez...; Beng Kang Tay; Aurelien Bruyant
• Keywords: Nanospectroscopy; Highly Doped Semiconductors; Engineering::Electrical and electronic engineering; nanospectroscopy; infrared plasmonics; 02 engineering and technology; 540; 530; highly doped semiconductors; [SPI.TRON]Engineering Sciences [physics]/Electronics; :Electrical and electronic engineering [Engineering]; [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic; effective polarizability; 0210 nano-technology; epsilon-near-zero

All-semiconductor plasmonic gratings are investigated by spectroscopic nanoimaging in the vicinity of plasma frequency, where material behaves as an epsilon near-zero (ENZ) material. Both phase-sensitive scattering type nanoscopy (s-SNOM) and photoinduced force microscopy (PiFM) carried out on this structure. The obtained data models reveal that PiFM, for s-SNOM, can have a mostly dispersive line shape, contrast with recent near-field spectra photothermal AFM nanoscopic imaging ENZ absorption maxima observed. On result, PiFM signal exhibited better sensitivity to dielectric function variation while interferometric s-SNOM provide additional phase information. Localized surface plasmon resonances (LSPR), highly confined structure edges were also observed both techniques. A higher was LSPR observation. In addition, microscopies, response is phenomenologically described using similar formalism based dipole-image dipole approach. model, difference between techniques accounted probes having different polarizabilities.