Ultra-Energy-Efficient Photoelectrode Using Microstriped GaN on Si

• DOI: 10.1021/acsphotonics.9b00478
• Publication Date: 2019-04-04T13:49:14Z
• Authors: Z. A. Syed; Y. Hou; X. Yu; S. Shen; M. Athanasiou; J. Bai; T. Wang
• Keywords: Photocurrent

A prototype photoelectrode with a unique design has been fabricated using GaN microstripes grown on patterned Si substrate. The demonstrated record-high photocurrent density of 11 mA/cm2 upon one sun illumination and H2 generation rate up to 2.67 mL·cm–2·h–1. This performance step-change achieved due the contribution from both silicon substrate, as such combination covers wide spectral region (from ultraviolet bandgap infrared bandgap). Unlike conventional where thick AlN layer is required separate in order avoid well-known Ga melt-back issue, GaN/silicon heterojunction our can be formed result weak reaction, which specially designed configuration microstripes. Two reference photoelectrodes have for comparison support conclusion. results presented may pave way fabrication ultra-energy-efficient GaN-on-Si-based or even photovoltaics devices.