Thermal Emission of Silicon at Near-Infrared Frequencies Mediated by Mie Resonances

• DOI: 10.1021/acsphotonics.9b01513
• Publication Date: 2019-12-03T17:51:17Z
• Authors: Roberto Fenollosa; Fernando Ramiro-M...; Moisés Garín; Ramón Alcubilla
• Keywords: Thermal Emission

Planck's law constitutes one of the cornerstones in physics. It explains well-known spectrum an ideal blackbody consisting a smooth curve, whose peak wavelength and intensity depend on temperature body. This scenario changes drastically, however, when size emitting object is comparable to emitted radiation. Here we show that silicon microsphere (2–3 μm diameter) heated around 800 °C yields thermal emission pronounced peaks are associated with Mie resonances. We experimentally demonstrate near-infrared existence modes ultrahigh quality factor, Q, 400, which substantially higher than values reported so far, set new benchmark field emission. Simulations predict response microspheres very fast, about 15 μs. Additionally, possibility achieving light above Planck limit at some frequency ranges envisaged.