Magnetic Field Assisted Enhanced Sensitivity of Nonferromagnetic Materials Boosting the Carrier Transfer: Mechanistic Studies

• DOI: 10.1021/acssensors.4c01170
• Publication Date: 2024-09-10T12:16:44Z
• Authors: Jing Cao; Zixuan Zhang; Shuangming Wang; Zhiying Sun; Jiahao Li; Yao Wang; Xiaoxue Xu; Zhixu Ye; Haiming Zhang
• Keywords: Boosting

The performance of semiconductor sensors is determined by reaction kinetics, conductivity, and electron mobility, which are undoubtedly closely related to the motion behavior. Therefore, effective regulation electronic states crucial for improving gas sensing properties. Previous methods enhancing gas-sensing have induced complex material modifications, extent improvement usually very limited. Further optimization requires continuous efforts advance new technologies. Toward this issue, a novel magnetic field-induced strategy adopted boost carrier transfer efficiency nonferromagnetic semiconductors. investigation results manifest that applied field can effectively enhance sensitivity reduce baseline resistance. In