High-Mobility Field-Effect Transistors from Large-Area Solution-Grown Aligned C60 Single Crystals

• DOI: 10.1021/ja210430b
• Publication Date: 2012-01-06T13:05:42Z
• Authors: Hanying Li; Benjamin C-K. Tee; Judy J. Cha; Yi Cui; Jong Won Chung; Sang Yoon Lee; Zhenan Bao
• Keywords: Electron Mobility; Organic semiconductor; Crystal (programming language)

Field-effect transistors based on single crystals of organic semiconductors have the highest reported charge carrier mobility among materials, demonstrating great potential for electronic applications. However, single-crystal devices are difficult to fabricate. One biggest challenges is prepare dense arrays over large-area substrates with controlled alignment. Here, we describe a solution processing method grow large aligned C(60) crystals. Our well-aligned needles and ribbons show electron as high 11 cm(2)V(-1)s(-1) (average mobility: 5.2 ± 2.1 from needles; 3.0 0.87 ribbons). This observed ~8-fold higher than maximum solution-grown n-channel materials (1.5 cm(2)V(-1)s(-1)) ~2-fold any material (~6 cm(2)V(-1)s(-1)). Furthermore, our deposition scalable 100 mm wafer substrate, around 50% surface covered by Hence, facilitates fabrication amounts high-quality semiconductor fundamental studies, substantial improvement coverage crystals, this might be suitable applications semiconductors.