Efficiency Enhancement of InP Nanowire Solar Cells by Surface Cleaning
Suns in alchemy
Nanoimprint lithography
Open-circuit voltage
DOI:
10.1021/nl4016182
Publication Date:
2013-07-30T17:57:18Z
AUTHORS (11)
ABSTRACT
We demonstrate an efficiency enhancement of InP nanowire (NW) axial p-n junction solar cell by cleaning the NW surface. arrays were grown with in situ HCl etching on substrate patterned nanoimprint lithography, and NWs surfaces cleaned after growth piranha etching. find that postgrowth is critical for obtaining a good performance. With this procedure, high diode rectification factor 10(7) obtained at ±1 V. The resulting exhibits open-circuit voltage (Voc) 0.73 V, short-circuit current density (Jsc) 21 mA/cm(2), fill (FF) 1 sun. This yields power conversion up to 11.1% sun 10.3% 12 suns.
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