High-quality GaN films grown on chemical vapor-deposited graphene films
0103 physical sciences
01 natural sciences
DOI:
10.1038/am.2012.45
Publication Date:
2012-09-07T06:02:34Z
AUTHORS (5)
ABSTRACT
We demonstrate the growth of high-quality GaN films with flat surface and uniform morphology on large-scale polycrystalline chemical vapor-deposited graphene films. The films exhibit stimulated emission even at room temperature, a highly c-axis-oriented crystal structure, and a preferred in-plane orientation. Furthermore, the GaN films grown on the graphene films can be used for fabrication of blue and green light-emitting diodes.
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