Electric-field switching of perpendicularly magnetized multilayers

• DOI: 10.1038/am.2015.72
• Publication Date: 2015-07-10T06:04:18Z
• Authors: Yasuhiro Shirahata; Ryota Shiina; Diego López González; Kévin J A Franke; Eiji Wada; Mitsuru Itoh; Nikolay A Pertsev; Sebastiaan van Di...; Tomoyasu Taniyama
• Keywords: magnetic anisotropy; ta214; ta114; ta221; magnetic domains; electric-field effect; magnetic switching; 7. Clean energy; ta218

Perpendicularly magnetized layers are used widely for high-density information storage in magnetic hard disk drives and nonvolatile random access memories. Writing erasing of these devices is implemented by magnetization switching local fields or via intense pulses electric current. Improvements energy efficiency could be obtained when the reorientation perpendicular controlled an field. Here, we report on reversible electric-field-driven out-of-plane to in-plane Cu/Ni multilayers ferroelectric BaTiO3 at room temperature. Fully deterministic this hybrid material system based efficient strain transfer from ferroelastic domains high sensitivity anisotropy electric-field-induced modulations. We also demonstrate that magnetoelectric coupling effect can realize 180° reversal if symmetry temporarily broken a small An electric-field technique lower required write erase data devices. recording new technology aligns bits into vertical arrangements using specially constructed multilayer films. Normally, bursts currents needed modify individual bits. Tomoyasu Taniyama Tokyo Institute Technology international collaborators have discovered growing perpendicularly magnetised copper-nickel top crystals produces responsive modest fields. Laser-based measurements theoretical analysis revealed fast, reversible, temperature method was driven mechanical metal multilayer-ferroelectric interface. Successful results with films up 65 nanometers thick indicate approach holds promise practical spintronics applications. Reversible between perpendicular-to-plane orientations demonstrated The