Ultrasensitive broadband phototransistors based on perovskite/organic-semiconductor vertical heterojunctions

• DOI: 10.1038/lsa.2017.23
• Publication Date: 2017-08-11T06:21:01Z
• Authors: Chao Xie; Peng You; Zhike Liu; Li Li; Feng Yan
• Keywords: Photodetection; Ultraviolet; Organic semiconductor; Photoresistor

Organolead halide perovskites have emerged as the most promising materials for various optoelectronic devices, especially solar cells, because of their excellent properties. Here, we present first report low-voltage high-gain phototransistors based on perovskite/organic-semiconductor vertical heterojunctions, which show ultrahigh responsivities ~109A W-1 and specific detectivities ~1014 Jones in a broadband region from ultraviolet to near infrared. The high sensitivity devices is attributed pronounced photogating effect that mainly due long carrier lifetimes strong light absorption perovskite material. In addition, flexible photodetectors been successfully prepared via solution process well flexibility bending durability. performance facile solution-based fabrication indicate promise potential application ultrasensitive photodetection.