Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe

• DOI: 10.1038/ncomms11623
• Publication Date: 2016-06-09T13:53:17Z
• Authors: D. Kriegner; K. Výborný; K. Olejník; H. Reichlová; V. Novák; X. Marti; J. Gazquez; V. Saidl; P. Němec; V. V. Volobuev; G. Springholz; V. Holý; T. Jungwirth
• Keywords: Bistability

Abstract Commercial magnetic memories rely on the bistability of ordered spins in ferromagnetic materials. Recently, experimental bistable have been realized using fully compensated antiferromagnetic metals. Here we demonstrate a multiple-stable memory device epitaxial MnTe, an counterpart common II–VI semiconductors. Favourable micromagnetic characteristics MnTe allow us to smoothly varying zero-field anisotropic magnetoresistance (AMR) with harmonic angular dependence writing field angle, analogous ferromagnets. The continuously AMR provides means for electrical read-out states, which set by heat-assisted magneto-recording and changing direction. multiple stability our is ascribed different distributions domains Néel vector aligned along one three easy axes. robustness against strong perturbations combined states are unique properties antiferromagnets.