Tailoring spin defects in diamond by lattice charging
Diamond cubic
Coherence time
Lattice (music)
DOI:
10.1038/ncomms15409
Publication Date:
2017-05-17T10:41:25Z
AUTHORS (9)
ABSTRACT
Abstract Atomic-size spin defects in solids are unique quantum systems. Most applications require nanometre positioning accuracy, which is typically achieved by low-energy ion implantation. A drawback of this technique the significant residual lattice damage, degrades performance spins applications. Here we show that charge state implantation-induced drastically influences formation during thermal annealing. Charging vacancies at, for example, nitrogen implantation sites suppresses vacancy complexes, resulting tenfold-improved coherence times and twofold-improved yield nitrogen-vacancy centres diamond. This confining into space-charge layer free carriers generated a boron-doped diamond structure. By combining these results with numerical calculations, arrive at quantitative understanding dynamics implanted defects. These could improve engineering devices using solid-state
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