A plasma-treated chalcogenide switch device for stackable scalable 3D nanoscale memory

• DOI: 10.1038/ncomms3629
• Publication Date: 2013-10-16T11:15:45Z
• Authors: Myoung-Jae Lee; Dongsoo Lee; Seong-Ho Cho; Ji-Hyun Hur; Sang-Moon Lee; David H Seo; Dong-Sik Kim; Moon-Seung Yang; Sunghun Lee; Euichul Hwang; Mohammad Rakib Uddin; Hojung Kim; U-In Chung; Youngsoo Park; In-Kyeong Yoo
• Keywords: 0103 physical sciences; 01 natural sciences; 7. Clean energy

Stackable select devices such as the oxide p-n junction diode and the Schottky diode (one-way switch) have been proposed for non-volatile unipolar resistive switching devices; however, bidirectional select devices (or two-way switch) need to be developed for bipolar resistive switching devices. Here we report on a fully stackable switching device that solves several problems including current density, temperature stability, cycling endurance and cycle distribution. We demonstrate that the threshold switching device based on As-Ge-Te-Si material significantly improves cycling endurance performance by reactive nitrogen deposition and nitrogen plasma hardening. Formation of the thin Si₃N₄ glass layer by the plasma treatment retards tellurium diffusion during cycling. Scalability of threshold switching devices is measured down to 30 nm scale with extremely fast switching speed of ~2 ns.