Hopping transport through defect-induced localized states in molybdenum disulphide

• DOI: 10.1038/ncomms3642
• Publication Date: 2013-10-23T11:31:25Z
• Authors: Hao Qiu; Tao Xu; Zilu Wang; Wei Ren; Haiyan Nan; Zhenhua Ni; Qian Chen; Shijun Yuan; Feng Miao; Fengqi Song; Gen Long; Yi Shi; Litao Sun; Jinlan Wang; Xinran Wang
• Keywords: Variable-range hopping; Molybdenum disulfide; Electron Mobility

Molybdenum disulfide is a novel two-dimensional semiconductor with potential applications in electronic and optoelectronic devices. However, the nature of charge transport in back-gated devices still remains elusive as they show much lower mobility than theoretical calculations and native n-type doping. Here we report transport study in few-layer molybdenum disulfide, together with transmission electron microscopy and density functional theory. We provide direct evidence that sulfur vacancies exist in molybdenum disulfide, introducing localized donor states inside the bandgap. Under low carrier densities, the transport exhibits nearest-neighbor hopping at high temperatures and variable-range hopping at low temperatures, which can be well explained under Mott formalism. We suggest that the low-carrier-density transport is dominated by hopping via these localized gap states. Our study reveals the important role of short-range surface defects in tailoring the properties and device applications of molybdenum disulfide.<br/>35 pages, 4 figures. To appear in Nature Communications<br/>