Observation of the intrinsic bandgap behaviour in as-grown epitaxial twisted graphene

• DOI: 10.1038/ncomms6677
• Publication Date: 2015-01-06T13:57:46Z
• Authors: Jeongho Park; William C. Mitchel; Said Elhamri; Lawrence Grazulis; John Hoelscher; Krishnamurthy Mah...; Choongyu Hwang; Sung-Kwan Mo; Jonghoon Lee
• Keywords: 0103 physical sciences; 01 natural sciences

Twisted graphene is of particular interest due to several intriguing characteristics, such as its the Fermi velocity, van Hove singularities and electronic localization. Theoretical studies recently suggested possible bandgap opening tuning. Here, we report a novel approach producing epitaxial twisted on SiC (0001) observation intrinsic behaviour. The direct deposition C60 pre-grown layers results in few-layer confirmed by angular resolved photoemission spectroscopy Raman analysis. strong enhanced G band sp3 bonding characteristic X-ray suggests existence interlayer interaction between adjacent layers. spacing measured transmission electron microscopy 0.352±0.012 nm. Thermal activation behaviour nonlinear current–voltage characteristics conclude that an opened graphene. Low sheet resistance (~160 Ω□−1 at 10 K) high mobility (~2,000 cm2 V−1 s−1 are observed. Stacking way each layer rotated relative one below provides controlling properties this useful material. Park et al. now demonstrate technique for fabricating it has bandgap.