High-speed detection at two micrometres with monolithic silicon photodiodes

• DOI: 10.1038/nphoton.2015.81
• Publication Date: 2015-05-25T18:18:23Z
• Authors: Jason J. Ackert; David J. Thomson; Li Shen; Anna C. Peacock; Paul E. Jessop; Graham T. Reed; Goran Z. Mashanovich; Andrew P. Knights
• Keywords: Photodetection; Photodiode; Raman amplification; Gigabit

With continued steep growth in the volume of data transmitted over optical networks there is a widely recognized need for more sophisticated photonics technologies to forestall a ‘capacity crunch’[1]. A promising solution is to open new spectral regions at wavelengths near 2µm and to exploit the long-wavelength transmission and amplification capabilities of hollowcore photonic-bandgap fibres[2,3] and the recently available thulium-doped fibre amplifiers[4]. To date, photodetector devices for this window have largely relied on III-V materials[5] or, where the benefits of integration with silicon photonics are sought, GeSn alloys, which have been demonstrated thus far with only limited utility[6-9]. Here, we describe a silicon photodiode operating at 20 Gb/s in this wavelength region. The detector is compatible with standard silicon processing and is integrated directly with silicon-on-insulator waveguides, which suggests future utility in silicon-based mid-infrared integrated optics for applications in communications.