Electrical programmable multilevel nonvolatile photonic random-access memory

• DOI: 10.1038/s41377-023-01213-3
• Publication Date: 2023-08-01T08:01:59Z
• Authors: Jiawei Meng; Yaliang Gui; Behrouz Movahhed ...; Xiaoxuan Ma; Yifei Zhang; Cosmin-Constantin...; Myungkoo Kang; Mario Miscuglio; Nicola Peserico; Kathleen Richardson; Juejun Hu; Hamed Dalir; Volker J. Sorger
• Keywords: Non-Volatile Memory

Photonic Random-Access Memories (P-RAM) are an essential component for the on-chip non-von Neumann photonic computing by eliminating optoelectronic conversion losses in data links. Emerging Phase-Change Materials (PCMs) have been showed multilevel memory capability, but demonstrations still yield relatively high optical loss and require cumbersome WRITE-ERASE approaches increasing power consumption system package challenges. Here we demonstrate a multistate electrically programmed low-loss nonvolatile based on broadband transparent phase-change material (Ge2Sb2Se5, GSSe) with ultralow absorption amorphous state. A zero-static-power multi-bit P-RAM is demonstrated silicon-on-insulator platform, featuring efficient amplitude modulation up to 0.2 dB/μm insertion of total 0.12 dB 4-bit showing 100× improved signal ratio compared other phase-change-materials memories. We further optimize positioning dual microheaters validating performance tradeoffs. Experimentally half-a-million cyclability test showcasing robust approach this device. Low-loss retention-of-state adds key feature functional programmable circuits impacting many applications including neural networks, LiDAR, sensors example.