Two-electron spin correlations in precision placed donors in silicon

• DOI: 10.1038/s41467-018-02982-x
• Publication Date: 2018-03-01T11:28:32Z
• Authors: M. A. Broome; S. K. Gorman; M. G. House; S. J. Hile; J. G. Keizer; D. Keith; C. D. Hill; T. F. Watson; W. J. Baker; L. C. L. Hollenberg; M. Y. Simmons
• Keywords: Dephasing

Substitutional donor atoms in silicon are promising qubits for quantum computation with extremely long relaxation and dephasing times demonstrated. One of the critical challenges scaling these systems is determining inter-donor distances to achieve controllable wavefunction overlap while at same time performing high fidelity spin readout on each qubit. Here we such a device by means scanning tunnelling microscopy lithography. We measure anti-correlated states between two donor-based separated 16${\pm}1$ nm. By utilizing an asymmetric system phosphorus donors one qubit site other (2P-1P), demonstrate that exchange interaction can be turned off via electrical control in-plane doped detuning gates. determine tunnel coupling 2P-1P 200 MHz provide roadmap observation two-electron coherent oscillations.